DSEP40-03AS ns hiperfred symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 340 i a v f 1.44 r 0.85 k/w v r = 2 1 3 min. 40 t = 10 ms applications: v rrm v 300 1 t vj vc = t vj c =ma 0.1 package: part number v r = t vj =c i f =a v t c = 120c d = p tot 185 w t c c = t vj 175 c -55 v i rrm = = 300 40 40 t vj = 45c DSEP40-03AS v a 300 v 300 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 1.81 t vj c =25 c j j unction capacitance v = v; t 150 v f0 v 0.72 t vj = 175c r f 10 f = 1 mhz = c 25 m v 1.18 t vj =c i f =a v 40 1.58 i f =a 80 i f =a 80 threshold voltage slope resistance for power loss calculation only backside: cathode 3a t vj =c reverse recovery time a 7 35 55 ns (50 hz), sine t rr = 35 ns housing: high performance fast recovery diode low loss and soft recovery single diode to-263 (d2pak) r industry standard outline r epoxy meets ul 94v-0 r rohs compliant r vj i rm max. reverse recovery current i f =a; 30 25 t= 125c vj -di f =a/s 200 /dt t rr v r =v 200 t vj =c 25 t= 125c vj a 50 150 pf thermal resistance junction to case thjc rectangular 0.5 planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) fav average forward current fav 150 ixys reserves the right to change limits, conditions and dimensions. ? 20090326a data according to iec 60747and per diode unless otherwise specified 2009 ixys all rights reserved
DSEP40-03AS i rms a per pin 35 r thch k/w 0.25 t stg c 150 storage temperature -55 weight g 2 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit i is typically limited by: 1. pin-to-chip re sistance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a non-isol ated backside, the whole current capability can be used by con necting the backside. f c n 60 mounting force with clip 20 ordering delivering mode base qty code key standard part name DSEP40-03AS 501174 tape & reel 800 product marking date code part no. logo order code xxxxxxxxx ixys yww abcd 1) 1 ) marking on product DSEP40-03AS rms ixys reserves the right to change limits, conditions and dimensions. ? 20090326a data according to iec 60747and per diode unless otherwise specified 2009 ixys all rights reserved
DSEP40-03AS min max min max a 4.06 4.83 0.160 0.190 a1 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.029 d 8.38 9.40 0.330 0.370 d1 8.00 8.89 0.315 0.350 e 9.65 10.41 0.380 0.410 e1 6.22 8.20 0.245 0.323 e h 14.61 15.88 0.575 0.625 l 1.78 2.79 0.070 0.110 l1 1.02 1.68 0.040 0.066 l2 1.02 1.52 0.040 0.060 w typ. 0.02 0.040 typ. 0.0008 0.0016 all dimensions conform with and/or are within jedec standard. dim. millimeter inches 2,54 bsc typ. 0.10 typ. 0.004 0,100 bsc outlines to-263 (d2pak) ixys reserves the right to change limits, conditions and dimensions. ? 20090326a data according to iec 60747and per diode unless otherwise specified 2009 ixys all rights reserved
DSEP40-03AS 0.00.40.81.21.62.0 10 20 30 40 50 60 100 300 500 0 200 400 20 30 40 50 60 70 80 0.00 1 0.01 0.1 1 10 0.1 1 0 40 80 120 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj [c] -di f /dt [a/s] t [s] 0 100 200 300 400 500 100 200 300 400 500 600 700 800 2 4 6 8 10 12 14 16 0 100 200 300 400 500 2 4 6 8 10 12 14 16 0 100 200 300 400 500 0.1 0.2 0.3 0.4 0.5 q rr [c] v f [v] -di f /dt [a/s] z thjc [k/w] i f = 60 a 30 a 15 a i f =60 a 30 a 15 a i rr q rr i f = 60 a 30 a 15 a v fr t fr 125c t vj =125c v r = 200 v t vj =125c v r = 200 v i f =30a t vj =125c v r = 200 v t vj =150c t vj = 125c v r =200 v fig. 1 forward current i f versus forward voltage v f fig. 2 typ. reverse recovery charge q rr versus -di f /dt fig. 3 typ. reverse recovery current i rr versus -di f /dt fig. 4 dynamic parameters q rr ,i rr versus t vj fig. 5 typ. reverse recovery time t rr versus -di f /dt fig. 6 typ. forward recovery voltage v fr & forward recovery time t fr vs. di f /dt fig. 8 transient thermal impedance junction to case 25c i f [a] -di f /dt [a/s] i rr [a] t rr [ns] -di f /dt [a/s] t fr [ns] v fr [v] 0 100 200 300 400 500 2 4 6 8 10 12 14 e rec [j] -di f /dt [a/s] fig. 7 typ. recovery energy e rec versus -di f /dt t vj =125c v r =200 v r thi [k/w] 0.139 0.176 0.305 0.23 t i [s] 0.00028 0.0033 0.028 0.17 i f =15 a 30 a 60 a ixys reserves the right to change limits, conditions and dimensions. ? 20090326a data according to iec 60747and per diode unless otherwise specified 2009 ixys all rights reserved
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